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? semiconductor components industries, llc, 2013 april, 2013 ? rev. 2 1 publication order number: ncp703/d ncp703 300 ma, ultra-low quiescent current, i q 12 a, ultra-low noise, ldo voltage regulator noise sensitive rf applications such as power amplifiers in satellite radios, infotainment equipment, and precision instrumentation require very clean power supplies. the ncp703 is 300 ma ldo that provides the engineer with a very stable, accurate voltage with ultra low noise and very high power supply rejection ratio (psrr) suitable for rf applications. the device doesn?t require any additional noise bypass capacitor to achieve ultra ? low noise performance. in order to optimize performance for battery operated portable applications, the ncp703 employs dynamic iq management for ultra ? low quiescent current consumption at light ? load conditions and great dynamic performance. features ? operating input voltage range: 2.0 v to 5.5 v ? available in fixed voltage options: 0.8 to 3.5 v contact factory for other voltage options ? ultra ? low quiescent current of typ. 12 a ? ultra ? low noise: 13 v rms from 100 hz to 100 khz ? very low dropout: 180 mv typical at 300 ma ? 2% accuracy over load/line/temperature ? high psrr: 68 db at 1 khz ? internal soft ? start to limit the turn ? on inrush current ? thermal shutdown and current limit protections ? stable with a 1 f ceramic output capacitor ? available in tsop ? 5 and xdfn 1.5 x 1.5 mm package ? active output discharge for fast turn ? off ? these are pb ? free devices typical applicaitons ? pdas, mobile phones, gps, smartphones ? wireless handsets, wireless lan, bluetooth, zigbee ? portable medical equipment ? other battery powered applications figure 1. typical application schematic in en out gnd ncp703 1 f 1 f c out v out c in v in ceramic on off http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 16 of this data sheet. ordering information tsop ? 5 sn suffix case 483 1 5 x, xxx = specific device code m = date code a = assembly location y = year w = work week = pb ? free package 1 5 xxxayw marking diagrams xdfn6 mx suffix case 711ae x m 1 1 pin connections 5 ? pin tsop ? 5 (top view) 6 ? pin xdfn 1.5 x 1.5 mm (top view) out n/c n/c in en gnd in en n/c out gnd 1 1
ncp703 http://onsemi.com 2 figure 2. simplified schematic block diagram in thermal shutdown uvlo mosfet driver with current limit auto low power mode integrated soft ? start active discharge en bandgap reference enable logic en out gnd table 1. pin function description pin no. xdfn6 pin no. tsop ? 5 pin name description 1 5 out regulated output voltage pin. a small 1 f ceramic capacitor is needed from this pin to ground to assure stability. 2 4 n/c not connected. 3 2 gnd power supply ground. connected to the die through the lead frame. soldered to the copper plane allows for effective heat dissipation. 4 3 en enable pin. driving en over 0.9 v turns on the regulator. driving en below 0.4 v puts the regu- lator into shutdown mode. 5 n/c not connected. this pin can be tied to ground to improve thermal dissipation. 6 1 in input pin. a small capacitor is needed from this pin to ground to assure stability. table 2. absolute maximum ratings rating symbol value unit input voltage (note 1) v in ? 0.3 v to 6 v v output voltage v out ? 0.3 v to v in + 0.3 v v enable input v en ? 0.3 v to v in + 0.3 v v output short circuit duration t sc indefinite s maximum junction temperature t j(max) 150 c storage temperature t stg ? 55 to 150 c esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. refer to electrical characteristics and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per aec ? q100 ? 002 (eia/jesd22 ? a114) esd machine model tested per aec ? q100 ? 003 (eia/jesd22 ? a115) latchup current maximum rating tested per jedec standard: jesd78.
ncp703 http://onsemi.com 3 table 3. thermal characteristics (note 3) rating symbol value unit thermal characteristics, tsop ? 5, thermal resistance, junction ? to ? air thermal characterization parameter, junction ? to ? lead (pin 2) ja jl 241 129 c/w thermal characteristics, xdfn6 1.5 x 1.5 mm thermal resistance, junction ? to ? air thermal characterization parameter, junction ? to ? board ja jb 146 77 c/w 3. single component mounted on 1 oz, fr4 pcb with 645 mm 2 cu area. table 4. electrical characteristics ? 40 c t j 125 c; v in = v out(nom) + 0.5 v or 2.0 v, whichever is greater; v en = 0.9 v, i out = 10 ma, c in = c out = 1 f unless otherwise noted. typical values are at t j = +25 c. (note 4) parameter test conditions symbol min typ max unit operating input voltage v in 2.0 5.5 v undervoltage lock ? out v in rising uvlo 1.2 1.6 1.9 v output voltage accuracy v out + 0.5 v v in 5.5 v, i out = 0 ? 300 ma v out ? 2 +2 % line regulation v out + 0.5 v v in 4.5 v, i out = 10 ma reg line 450 v/v v out + 0.5 v v in 5.5 v, i out = 10 ma reg line 600 v/v load regulation i out = 0 ma to 300 ma reg load 20 v/ma load transient i out = 1 ma to 300 ma or 300 ma to 1 ma in 1 s, c out = 1 f tran load ? 100/ +150 mv dropout voltage (note 5) i out = 300 ma, v out(nom) = 2.5 v v do 180 300 mv output current limit v out = 90% v out(nom) i cl 310 450 750 ma quiescent current i out = 0 ma i q 12 20 a ground current i out = 300 ma i gnd 200 a shutdown current v en 0.4 v, t j = +25 c i dis 0.12 a v en 0 v, v in = 2.0 to 4.5 v, t j = ? 40 to +85 c i dis 0.55 2 a en pin threshold voltage high threshold low threshold v en voltage increasing v en voltage decreasing v en_hi v en_lo 0.9 0.4 v en pin input current v en = 5.5 v i en 100 500 na turn ? on time c out = 1.0 f, from assertion en pin to 98% v out(nom) t on 200 s power supply rejection ratio v in = 3 v, v out = 2.5 v i out = 300 ma f = 100 hz f = 1 khz f = 10 khz psrr 70 68 53 db output noise voltage v out = 2.5 v, v in = 3 v, i out = 300 ma f = 100 hz to 100 khz v n 13 v rms thermal shutdown temperature temperature increasing from t j = +25 c t sd 160 c thermal shutdown hysteresis temperature falling from t sd t sdh ? 20 ? c 4. performance guaranteed over the indicated operating temperature range by design and/or characterization. production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 5. characterized when v out falls 100 mv below the regulated voltage at v in = v out(nom) + 0.5 v.
ncp703 http://onsemi.com 4 typical characteristics figure 3. output voltage noise spectral density for v out = 0.8 v, c out = 1 f frequency (khz) 100 1000 10 1 0.1 0.01 0.001 0.01 0.1 1 10 figure 4. output voltage noise spectral density for v out = 0.8 v, c out = 4.7 f figure 5. output voltage noise spectral density for v out = 3.3 v, c out = 1 f output voltage noise ( v/rthz) v in = 2.0 v v out = 0.8 v c in = c out = 1 f mlcc, x7r, 1206 size i out = 1 ma i out = 10 ma i out = 300 ma 1 ma 18.45 17.77 10 ma 17.18 16.43 300 ma 14.14 13.11 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out frequency (khz) 1000 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 output voltage noise ( v/rthz) v in = 2.0 v v out = 0.8 v c in = 1 f c out = 4.7 f mlcc, x7r, 1206 size i out = 1 ma i out = 10 ma i out = 300 ma 1 ma 14.07 13.14 10 ma 16.59 15.83 300 ma 15.46 14.53 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out frequency (khz) 1000 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 output voltage noise ( v/rthz) v in = 3.8 v v out = 3.3 v c in = c out = 1 f mlcc, x7r, 1206 size i out = 1 ma i out = 10 ma i out = 300 ma 1 ma 20.29 17.06 10 ma 19.76 16.11 300 ma 18.74 15.46 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out
ncp703 http://onsemi.com 5 typical characteristics figure 6. output voltage noise spectral density for v out = 3.3 v, c out = 4.7 f frequency (khz) 100 1000 10 1 0.1 0.01 0.001 0.01 0.1 1 10 output voltage noise ( v/rthz) i out = 1 ma i out = 10 ma i out = 300 ma 1 ma 17.64 13.52 10 ma 19.54 15.96 300 ma 21.50 18.71 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out v in = 3.8 v v out = 3.3 v c in = 1 f c out = 4.7 f mlcc, x7r, 1206 size figure 7. ground current vs. output current figure 8. ground current vs. output current from 0 ma to 2 ma figure 9. ground current vs. output current at temperatures figure 10. ground current vs. output current 0 ma to 2 ma at temperatures i out , output current (ma) i out , output current (ma) 300 250 200 150 100 50 0 0 35 105 140 210 245 315 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0 20 40 60 80 120 160 i out , output current (ma) i out , output current (ma) 270 210 180 120 90 60 30 0 0 30 60 120 150 180 240 270 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0 20 40 60 80 100 120 160 i gnd , ground current ( a) i gnd , ground current ( a) i gnd , ground current ( a) i gnd , ground current ( a) 70 175 350 280 v out = 0.8 v v out = 3.3 v v out = 2.5 v 150 240 300 90 210 v in = v out + 0.5 v c in = 1 f c out = 1 f mlcc, x7r, 1206 size v in = v out + 0.5 v c in = 1 f c out = 1 f mlcc, x7r, 1206 size 2.00 100 140 2.00 140 t j = 25 c t j = ? 40 c t j = 125 c v in = v out + 0.5 v c in = 1 f c out = 1 f mlcc, x7r, 1206 size v out = 0.8 v v out = 3.3 v v out = 2.5 v v in = v out + 0.5 v c in = 1 f c out = 1 f mlcc, x7r, 1206 size t j = 25 c t j = ? 40 c t j = 125 c
ncp703 http://onsemi.com 6 typical characteristics figure 11. quiescent current vs. temperature figure 12. quiescent current vs. input voltage t j , junction temperature ( c) v in , input voltage (v) 100 80 60 40 20 0 ? 20 ? 40 9.0 9.5 10.0 11.0 11.5 12.5 13.5 14.0 6 5 4 3 2 0 10 20 30 40 figure 13. output voltage vs. input voltage figure 14. output voltage vs. temperature ? 0.8 v v in , input voltage (v) t j , junction temperature ( c) 5.0 4.5 3.5 2.5 2.0 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 80 60 40 20 0 ? 20 ? 40 0.795 0.796 0.798 0.799 0.800 0.802 0.804 0.805 figure 15. output voltage vs. temperature ? 2.5 v figure 16. output voltage vs. temperature ? 3.3 v t j , junction temperature ( c) t j , junction temperature ( c) 120 80 60 40 20 0 ? 20 ? 40 2.4965 2.4975 2.4985 2.4995 2.5005 2.5015 2.5025 2.5035 120 80 60 40 20 0 ? 20 ? 40 3.2850 3.2875 3.2900 3.2925 3.2950 3.2975 3.3025 3.3050 i q , quiescent current ( a) i q , quiescent current ( a) v out , output voltage (v) v out , output voltage (v) v out , output voltage (v) v out , output voltage (v) 120 140 0.797 0.801 0.803 v in = 2 v v out = 0.8 v c in = 1 f c out = 1 f 100 140 v in = v out + 0.5 v v out = 2.5 v c in = 1 f c out = 1 f 100 140 3.3000 v in = v out + 0.5 v v out = 3.3 v c in = 1 f c out = 1 f 120 140 10.5 12.0 13.0 v in = v out + 0.5 v c in = 1 f c out = 1 f mlcc, x7r 1206 size v out = 2.5 v v out = 0.8 v v out = 3.3 v c in = 1 f c out = 1 f v out = 3.3 v mlcc, x7r 1206 size 1.5 3.0 4.0 5.5 6.0 c in = 1 f c out = 1 f mlcc, x7r 1206 size v out = 2.5 v v out = 0.8 v v out = 3.3 v
ncp703 http://onsemi.com 7 typical characteristics figure 17. line regulation vs. temperature ? 1.8 v figure 18. line regulation vs. temperature ? 2.8 v t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 60 20 0 ? 20 ? 40 0 100 300 400 600 700 800 1000 120 100 80 40 20 0 ? 20 ? 40 0 100 300 400 600 700 900 1000 figure 19. line regulation vs. temperature ? 3.3 v figure 20. load regulation vs. temperature ? 1.8 v t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 60 20 0 ? 20 ? 40 0 200 400 600 800 1000 1200 100 80 60 40 20 0 ? 20 ? 40 0 2 6 8 10 14 18 20 figure 21. load regulation vs. temperature ? 2.8 v figure 22. load regulation vs. temperature ? 3.3 v t j , junction temperature ( c) t j , junction temperature ( c) 120 100 60 40 20 0 ? 20 ? 40 0 2 4 8 12 14 18 20 120 80 60 40 20 0 ? 20 ? 40 0 2 4 6 12 14 18 20 reg line ( v/v) reg line ( v/v) reg line ( v/v) reg load (mv) reg load (mv) reg load (mv) v out = 1.8 v v in = 2.3 to 5.5 v c in = 1 f c out = 1 f i out = 10 ma 40 140 200 500 900 60 140 200 500 800 v out = 2.8 v v in = 3.3 to 5.5 v c in = 1 f c out = 1 f i out = 10 ma 40 140 v out = 3.3 v v in = 3.8 to 5.5 v c in = 1 f c out = 1 f i out = 10 ma 120 140 4 12 16 v out = 1.8 v v in = 2.3 v c in = 1 f c out = 1 f i out = 0 ma to 300 ma 80 140 6 10 16 v out = 2.8 v v in = 3.3 v c in = 1 f c out = 1 f i out = 0 ma to 300 ma 100 140 8 10 16 v out = 3.3 v v in = 3.8 v c in = 1 f c out = 1 f i out = 0 ma to 300 ma
ncp703 http://onsemi.com 8 typical characteristics figure 23. dropout vs. output current ? 2.5 v figure 24. dropout vs. temperature ? 2.5 v i out , output current (ma) t j , junction temperature ( c) 250 200 150 100 300 50 0 0 50 100 150 200 250 140 120 80 60 40 0 ? 20 ? 40 0 25 50 100 125 150 200 250 figure 25. enable threshold ? high figure 26. enable threshold ? low t j , junction temperature ( c) t j , junction temperature ( c) 100 80 60 40 20 0 ? 20 ? 40 550 575 600 625 650 700 725 750 figure 27. output current limit figure 28. short circuit limit t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 40 20 0 ? 20 ? 40 300 350 400 450 500 550 600 120 100 60 40 20 0 ? 20 ? 40 300 350 400 450 500 550 600 v drop , dropout voltage (mv) v drop , dropout voltage (mv) v en , enable voltage (mv) i cl , current limit (ma) i short , short circuit current (ma) t j = 25 c t j = ? 40 c t j = 125 c v out = 2.5 v c in = 1 f c out = 1 f v out = 2.5 v c in = 1 f c out = 1 f i out = 300 ma i out = 200 ma i out = 100 ma 100 20 75 175 225 120 140 675 v out = 3.3 v v in = 3.8 v c in = 1 f c out = 1 f i out = 10 ma 100 80 60 40 20 0 ? 20 ? 40 550 575 600 625 650 700 725 750 v en , enable voltage (mv) 120 140 675 v out = 3.3 v v in = 3.8 v c in = 1 f c out = 1 f i out = 10 ma 60 140 v in = 2.3 v v out = 1.8 v c in = 1 f c out = 1 f mlcc, x7r, size 1206 80 140 v in = 2.3 v v out = 1.8 v c in = 1 f c out = 1 f mlcc, x7r, size 1206
ncp703 http://onsemi.com 9 typical characteristics figure 29. power supply rejection ratio, v out = 1.8 v figure 30. power supply rejection ratio, v out = 2.5 v figure 31. power supply rejection ratio, v out = 3.3 v figure 32. power supply rejection ratio, v out = 3.3 v, i out = 10 ma figure 33. power supply rejection ratio, v out = 3.3 v, i out = 300 ma figure 34. output capacitor esr vs. output current i out , output current (ma) 300 250 200 150 100 50 0 0.1 1 10 esr ( ) v in = 5.5 v c in = c out = 1 f mlcc, x7r, 1206 size unstable region stable region v out = 0.8 v v out = 3.3 v f, frequency (khz) f, frequency (khz) 10,000 1000 100 10 1 0.1 0.01 0 10 30 40 50 70 80 100 10,000 1000 100 10 1 0.1 0.01 0 10 30 40 60 70 90 100 f, frequency (khz) f, frequency (khz) 10,000 1000 100 10 1 0.1 0.01 0 10 30 40 50 70 80 100 10,000 1000 100 10 1 0.1 0.01 0 10 30 40 60 70 90 100 f, frequency (khz) 10,000 1000 100 10 1 0.1 0.01 0 10 30 40 60 70 80 100 rr, ripple rejection (db) rr, ripple rejection (db) rr, ripple rejection (db) rr, ripple rejection (db) rr, ripple rejection (db) 20 50 90 v in = 3.8 v v out = 3.3 v c in = none mlcc, x7r, 1206 size cout = 1 f cout = 4.7 cout = 10 20 50 80 v in = 3.8 v v out = 3.3 v c in = none mlcc, x7r, 1206 size cout = 1 f cout = 4.7 cout = 10 20 60 90 iout = 1 ma iout = 10 ma iout = 100 ma iout = 200 ma iout = 300 ma v in = 2.3 v v out = 1.8 v c in = none c out = 1 f mlcc, x7r, 1206 size 20 50 80 iout = 1 ma iout = 10 ma iout = 100 ma iout = 200 ma iout = 300 ma v in = 3.0 v v out = 2.5 v c in = none c out = 1 f mlcc, x7r, 1206 size iout = 1 ma iout = 10 ma iout = 100 ma iout = 200 ma iout = 300 ma v in = 3.8 v v out = 3.3 v c in = none c out = 1 f mlcc, x7r, 1206 size 20 60 90
ncp703 http://onsemi.com 10 typical characteristics v in = 3.8 v v out = 3.3 v v en = 0.9 v i out = 10 ma c in = 1 f figure 35. enable turn ? on response ? c out = 1 f figure 36. enable turn ? on response ? c out = 4.7 f figure 37. enable turn ? on response ? c out = 10 f figure 38. enable turn ? off response figure 39. line transient response ? rising edge, v out = 3.3 v figure 40. line transient response ? falling edge, v out = 3.3 v v in = 3.8 v to 4.8 v v out = 3.3 v i out = 10 ma c in = 1 f c out = 1 f v in = 3.8 v v out = 3.3 v v en = 0.9 v i out = 10 ma c in = 1 f c out = 1 f 1 v / div 600 mv / div 100 s / div v out v en i inrush 100 ma / div 1 v / div 600 mv / div v in = 3.8 v v out = 3.3 v v en = 0.9 v i out = 10 ma c in = 1 f c out = 1 f v out v en i inrush v in = 3.8 v v out = 3.3 v v en = 0.9 v i out = 10 ma c in = 1 f c out = 4.7 f 100 s / div 100 ma / div 100 s / div 1 v / div 600 mv / div v out v en i inrush 100 ma / div 1 v / div 600 mv / div 1 ms / div v out v en i out c out = 4.7 f c out = 1 f 2 s / div 20 mv / div 500 mv / div v out v in t fall = 1 s 20 mv / div 500 mv / div 2 s / div v out v in t rise = 1 s v in = 3.8 v to 4.8 v v out = 3.3 v i out = 10 ma c in = 1 f c out = 1 f 100 ma / div
ncp703 http://onsemi.com 11 typical characteristics figure 41. load transient response ? rising edge, v out = 0.8 v, i out = 1 ma to 300 ma, c out = 1 f, 4.7 f figure 42. load transient response ? falling edge, v out = 0.8 v, i out = 1 ma to 300 ma, c out = 1 f, 4.7 f figure 43. load transient response ? rising edge, v out = 0.8 v, i out = 1 ma to 300 ma, t rise = 1 s, 10 s figure 44. load transient response ? rising edge, v out = 3.3 v, i out = 1 ma to 300 ma, c out = 1 f, 4.7 f figure 45. load transient response ? falling edge, v out = 3.3 v, i out = 1 ma to 300 ma, c out = 1 f, 4.7 f figure 46. load transient response ? rising edge, v out = 3.3 v, i out = 1 ma to 300 ma, t rise = 1 s, 10 s 40 mv / div 100 ma / div 40 mv / div 100 ma / div v in = 3.8 v v out = 3.3 v c in = 1 f (mlcc) c out = 1 f (mlcc) 10 s / div t rise = 10 s t rise = 1 s 50 s / div 40 mv / div 100 ma / div v in = 3.8 v v out = 3.3 v c in = 1 f (mlcc) v out i out 40 mv / div 100 ma / div v out i out v out i out 20 s / div 20 s / div c out = 4.7 f c out = 1 f 40 mv / div 100 ma / div 10 s / div 40 mv / div 100 ma / div v out i out v in = 3.8 v v out = 3.3 v c in = 1 f (mlcc) c out = 4.7 f c out = 1 f v out i out 50 s / div c out = 4.7 f c out = 1 f v in = 2 v v out = 0.8 v c in = 1 f (mlcc) t rise = 10 s t rise = 1 s v in = 2 v v out = 0.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) v out i out v in = 2 v v out = 0.8 v c in = 1 f (mlcc) c out = 4.7 f c out = 1 f
ncp703 http://onsemi.com 12 typical characteristics figure 47. turn ? on/off ? slow rising v in figure 48. short circuit and thermal shutdown 600 mv / div 5 ms / div v out = 3.3 v i out = 1 ma c in = 1 f (mlcc) c out = 1 f (mlcc) v out v in v in = 3.8 v v out = 3.3 v c in = 1 f (mlcc) c out = 1 f (mlcc) 10 s / div 300 ma / div 300 mv / div v out i out short circuit thermal shutdown
ncp703 http://onsemi.com 13 applications information general the ncp703 is a high performance 300 ma low dropout linear regulator. this device delivers excellent noise and dynamic performance. thanks to its adaptive ground current feature the device consumes only 12 a of quiescent current at no ? load condition. the regulator features ultra ? low noise of 13 vrms, psrr of 68 db at 1 khz and very good load/line transient performance. such excellent dynamic parameters and small package size make the device an ideal choice for powering the precision analog and noise sensitive circuitry in portable applications. the ldo achieves this ultra low noise level output without the need for a noise bypass capacitor. a logic en input provides on/off control of the output voltage. when the en is low the device consumes as low as typ. 120 na from the in pin. the device is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. input capacitor selection (cin) it is recommended to connect a minimum of 1 f ceramic x5r or x7r capacitor close to the in pin of the device. this capacitor will provide a low impedance path for unwanted ac signals or noise modulated onto constant input voltage. there is no requirement for the min. /max. esr of the input capacitor but it is recommended to use ceramic capacitors for their low esr and esl. a good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. larger input capacitor may be necessary if fast and large load transients are encountered in the application. output decoupling (cout) the ncp703 requires an output capacitor connected as close as possible to the output pin of the regulator. the recommended capacitor value is 1 f and x7r or x5r dielectric due to its low capacitance variations over the specified temperature range. the ncp703 is designed to remain stable with minimum ef fective capacitance of 0.1 f to account for changes with temperature, dc bias and package size. especially for small package size capacitors such as 0402 the ef fective ca pacitance drops rapidly with the applied dc bias. refer to the figure 49, for the capacitance vs. package size and dc bias voltage dependence. figure 49. capacitance change vs. dc bias there is no requirement for the minimum value of equivalent series resistance (esr) for the c out but the maximum value of esr should be less than 900 m . larger output capacitors and lower esr could improve the load transient response or high frequency psrr as shown in typical characteristics. it is not recommended to use tantalum capacitors on the output due to their large esr. the equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. the tantalum capacitors are generally more costly than ceramic capacitors. no ? load operation the regulator remains stable and regulates the output voltage properly within the 2% tolerance limits even with no external load applied to the output. enable operation the en pin is used to enable/disable the ldo and to deactivate/activate the active discharge function. if the en pin voltage is <0.4 v the device is guaranteed to be disabled. the pass transistor is turned ? off so that there is virtually no current flow between the in and out. the active discharge transistor is active so that the output voltage v out is pulled to gnd through a 320 resistor. in the disable state the device consumes as low as typ. 120 na from the v in . if the en pin voltage >0.9 v the device is guaranteed to be enabled. the ncp703 regulates the output voltage and the active discharge transistor is turned ? off.
ncp703 http://onsemi.com 14 applications information the en pin has internal pull ? down current source with typ. value of 110 na which assures that the device is turned ? off when the en pin is not connected. build in 2 mv hysteresis into the en prevents from periodic on/off oscillations that can occur due to noise. in the case where the en function isn?t required the en should be tied directly to in. undervoltage lockout the internal uvlo circuitry assures that the device becomes dis abled when the v in falls below typ. 1.5 v. when the v in voltage ramps ? up the ncp703 becomes enabled, if v in rises above typ. 1.6 v. the 100 mv hysteresis prevents from on/off oscillations that can occur due to noise on v in line. output current limit output current is internally limited within the ic to a typical 490 ma. the ncp703 will source this amount of current if the output voltage drops down to 90% of the nominal v out . when the output voltage is directly shorted to ground (v out = 0 v), the short circuit protection will limit the output current to 520 ma (typ). the current limit and short circuit protection will work properly up to v in = 5.5 v at t a = 25 c. there is no limitation for the short circuit duration. internal soft ? start circuit ncp703 contains an internal soft ? start circuitry to protect against large inrush currents which could otherwise flow during the start ? up of the regulator. soft ? start feature protects against power bus disturbances and assures a controlled and monotonic rise of the output voltage. thermal shutdown when the die temperature exceeds the thermal shutdown threshold (t sd ? 160 c typical), thermal shutdown event is detected and the device is disabled. the ic will remain in this state until the die temperature decreases below the thermal shutdown reset threshold (t sdu ? 140 c typical). once the ic temperature falls below the 140 c the ldo is enabled again. the thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. for reliable operation junction temperature should be limited to +125 c maximum. power dissipation as power dissipated in the ncp703 increases, it might become necessary to provide some thermal relief. the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. the maximum power dissipation the ncp703 can handle is given by: p d(max) 125 o c t a ja (eq. 1) the power dissipated by the ncp703 for given application conditions can be calculated from the following equations: p d v in i gnd @i out i out v in v out (eq. 2) 0.20 0.25 0.30 0.35 0.40 0.45 0.50 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700 figure 50. ja and p d(max) vs. copper area (tsop ? 5) ja , junction to ambient thermal resistance ( c/w) pcb copper area (mm 2 ) p d(max) , maximum power dissipation (w) ja , 2 oz cu ja , 1 oz cu p d(max) , t a = 25 c, 1 oz cu p d(max) , t a = 25 c, 2 oz cu
ncp703 http://onsemi.com 15 applications information 0.30 0.40 0.50 0.60 0.70 0.80 0.90 100 150 200 250 300 350 400 0 100 200 300 400 500 600 700 800 figure 51. ja vs. copper area (xdfn6) ja , junction to ambient thermal resistance ( c/w) pcb copper area (mm 2 ) p d(max) , maximum power dissipation (w) ja , 2 oz cu ja , 1 oz cu p d(max) , t a = 25 c, 1 oz cu p d(max) , t a = 25 c, 2 oz cu reverse current the pmos pass transistor has an inherent body diode which will be forward biased in the case that v out > v in . due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. load regulation the ncp703 features very good load regulation of typically 6 mv in 0 ma to 300 ma range. in order to achieve this very good load regulation a special attention to pcb design is necessary. the trace resistance from the out pin to the point of load can easily approach 100 m which will cause 30 mv voltage drop at full load current, deteriorating the excellent load regulation. line regulation the ic features very good line regulation of 0.6 mv/v measured from v in = v out + 0.5 v to 5.5 v. for battery operated applications it may be important that the line regulation from v in = v out + 0.5 v up to 4.5 v is only 0.45 mv/v. power supply rejection ratio the ncp703 features very good power supply rejection ratio. if desired the psrr at higher frequencies in the range 100 khz ? 10 mhz can be tuned by the selection of c out capacitor and proper pcb layout. output noise the ic is designed for ultra ? low noise output voltage without external noise filter capacitor (c nr ). figures 3 ? 6 shows ncp703 noise performance. generally the noise performance in the indicated frequency range improves with increasing output current. although even at i out = 1 ma the noise levels are below 20 v rms . turn ? on time the turn ? on time is defined as the time period from en assertion to the point in which v out will reach 98% of its nominal value. this time is dependent on various application conditions such as v out(nom) , c out , t a . pcb layout recommendations to obtain good transient performance and good regulation characteristics place c in and c out capacitors close to the device pins and make the pcb traces wide. in order to minimize the solution size, use 0402 capacitors. larger copper area connected to the pins will also improve the device thermal resistance. the actual power dissipation can be calculated from equation 2.
ncp703 http://onsemi.com 16 ordering information device voltage option marking package shipping ? ncp703mx18tcg 1.8 v j xdfn6 3000 / tape & reel ncp703mx28tcg 2.8 v k ncp703mx30tcg 3.0 v l ncp703mx33tcg 3.3 v p ncp703sn18t1g 1.8 v aec tsop5 3000 / tape & reel ncp703sn19t1g 1.9 v aeg ncp703sn28t1g 2.8 v aed ncp703sn30t1g 3.0 v aee ncp703sn33t1g 3.3 v aef NCP703SN35T1G 3.5 v aeh ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncp703 http://onsemi.com 17 package dimensions notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.10 and 0.20mm from terminal tip. c a seating plane d e 0.10 c a3 a1 2x 2x 0.10 c xdfn6 1.5x1.5, 0.5p case 711ae issue o dim a min max millimeters 0.35 0.45 a1 0.00 0.05 a3 0.13 ref b 0.20 0.30 d e e l pin one reference 0.05 c 0.05 c a 0.10 c note 3 l2 e b b 3 6 6x 1 4 0.05 c mounting footprint* l1 1.50 bsc 1.50 bsc 0.50 bsc 0.40 0.60 --- 0.15 bottom view l 5x dimensions: millimeters 0.73 6x 0.35 5x 1.80 0.50 pitch *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. l1 detail a l alternate terminal constructions l2 0.50 0.70 top view b side view recommended 0.83 a
ncp703 http://onsemi.com 18 package dimensions tsop ? 5 case 483 ? 02 issue h notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. 5. optional construction: an additional trimmed lead is allowed in this location. trimmed lead not to extend more than 0.2 from body. dim min max millimeters a 3.00 bsc b 1.50 bsc c 0.90 1.10 d 0.25 0.50 g 0.95 bsc h 0.01 0.10 j 0.10 0.26 k 0.20 0.60 l 1.25 1.55 m 0 10 s 2.50 3.00 123 54 s a g l b d h c j 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.20 5x c ab t 0.10 2x 2x t 0.20 note 5 t seating plane 0.05 k m detail z detail z on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ncp703/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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